发明名称 SILICON NITRIDE SINTERED COMPACT
摘要 PROBLEM TO BE SOLVED: To provide a silicon nitride sintered compact having an excellent strength in a temperature range from ordinary temperature to 1,000 deg.C, an excellent oxidation resistance and an excellent static fatigue characteristic. SOLUTION: The silicon nitride sintered compact contains silicon nitride as a main crystalline phase and an amorphous phase present at the grain boundary of the main crystalline phase. At least a part of the amorphous phase is crystallized into at least one kind crystalline phase of RE2 Si3 N2 O5 and RE3 AlSi2 O7 N2 (wherein, RE is at least one of the elements of group 3a of the Periodic Table) within 1 hour at 800 to 1,200 deg.C.
申请公布号 JP2002293639(A) 申请公布日期 2002.10.09
申请号 JP20010097433 申请日期 2001.03.29
申请人 KYOCERA CORP 发明人 FUKUTOME TAKEO
分类号 C04B35/584 主分类号 C04B35/584
代理机构 代理人
主权项
地址