| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a tungsten film, which can prevent the exfoliation of a titanium-based adherent film as an undercoat, caused by erosion with reactant gas. SOLUTION: The method of forming the tungsten film having a step of forming a titanium-based adherent layer 12 on a substrate 25, and a step of forming a tungsten film on the titanium-based adherent layer 12 with a CVD apparatus having a reaction chamber equipped with a holder 23 for covering periphery parts of the substrate 15, is characterized by the step of forming the tungsten film comprising the first step of forming silicon nuclei and then forming the first tungsten film 14 for covering the silicon nuclei, in a state that the holder 23 is separated from the substrate 25, on a basis of a reduction reaction of reductive reactant gas, and the second step of forming the second tungsten film 16 in a state that the holder 23 contacts or approaches the substrate 25.
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