发明名称 |
Semiconductor device using a polysilicon thin film and method for fabrication thereof |
摘要 |
The invention relates to a semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columna structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film (3) or an impurity layer on an interface (30) of an underlying film (2), followed by deposition of impurity-doped silicon thin film (4), if necessary, followed by heat treatment for polycrystallization. <IMAGE> |
申请公布号 |
EP1209726(A3) |
申请公布日期 |
2002.10.09 |
申请号 |
EP20020001183 |
申请日期 |
1995.09.15 |
申请人 |
HITACHI, LTD. |
发明人 |
MIURA, HIDEO;MORIBE, SHUNJI;KATO, HISAYUKI;KOIKE, ATSUYOSHI;IKEDA, SHUJI;NISHIMURA, ASAO |
分类号 |
H01L21/8247;C23C16/24;C23C16/44;C23C16/455;C23C16/52;H01L21/20;H01L21/205;H01L21/28;H01L21/285;H01L21/336;H01L29/04;H01L29/49;H01L29/78;H01L29/788;H01L29/792;H01L31/18 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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