SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR GENERATING VOLTAGE OF THE SAME

摘要

PURPOSE: A semiconductor memory device and a method for generating a voltage of the same are provided to generate a high voltage by using a reference voltage for peripheral circuit. CONSTITUTION: The first reference voltage generation circuit(10) receives an external supply voltage(VEXT) and generates the first reference voltage(VREF1). The first standby internal supply voltage generation circuit(12) receives the first reference voltage(VREF1) and generates the second reference voltage(VREF2). The first standby internal supply voltage generation circuit(16) generates a standby internal supply voltage(IVCPS) for a peripheral circuit(28). The first active internal supply voltage generation circuit(18) generates an active internal supply voltage(IVCPA) for a peripheral circuit(28). The first substrate voltage generation circuit(30) generates a substrate voltage(VBB) for a peripheral circuit(28). A high voltage generation circuit generates a high voltage for a peripheral circuit(28) and a memory cell array(34). The third reference voltage generation circuit(14) generates the third reference voltage(VREF3). The second standby internal supply voltage generation circuit(20) generates a standby internal supply voltage(IVCPS) for memory cell array(34). The second active internal supply voltage generation circuit(22) generates an active internal supply voltage(IVCAA) for memory cell array(34). The second substrate voltage generation circuit(24) generates a substrate voltage(VP) for memory cell array(34). A bit line precharge voltage generation circuit(26) generates a bit line precharge voltage(VBL) the third reference voltage.