发明名称 COMPOSITION FOR FORMING FILM AND MATERIAL FOR FORMING INSULATING FILM
摘要 PURPOSE: To obtain a composition for forming a film, as a material for the interlayer insulating film in semiconductor devices, which can make a coating film that has low dielectric property and excels in crack resistance, elastic modulus of film, and adhesiveness to a substrate. CONSTITUTION: A composition for forming a film containing an aromatic polyarylene and/or an aromatic polyarylene ether (A), a polyvinylsiloxane (B), and an organic solvent (C).
申请公布号 KR20020076126(A) 申请公布日期 2002.10.09
申请号 KR20020015835 申请日期 2002.03.23
申请人 JSR CORPORATION 发明人 NISHIKAWA MICHINORI;OKADA TAKESHI;SHINOHARA NORIYASU;SHIRATO KAORI;YAMADA KINJI
分类号 C09D165/00;C08G61/02;C08G61/12;C08L65/00;C08L71/12;C09D171/00;C09D171/12;C09D183/07;H01L21/312;H05K1/00;(IPC1-7):C09D171/00 主分类号 C09D165/00
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