| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which performs the etching treatment in a short time, and can manufacture products produced with the etching technology in a short time. SOLUTION: This etching method comprises generating plasma containing etching ions (oxygen ions) by using a Kaufman type of an ion source, in a state of applying negative pulsed voltage in a range of -10 kV or higher and -2 kV or lower onto the substrate K2, and selectively etching a ta-C thin film formed on the surface of the substrate K2, by the etching ions in the plasma with the use of a mask 22. Then, a pattern 21 P of the ta-C thin film is formed in a short time, because the applied negative pulsed-voltage onto the substrate K makes the plasma density high, the etching ions easily led to the ta-C thin film, and the etching speed increased.
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