| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat type, non-cooling type infrared sensor with high sensitivity and at low cost. SOLUTION: An infrared detecting pixel is provided with an infrared absorbing parts 201, 202, and a thermoelectric converting part 9 which converts a change in temperature caused by the heat generated in the infrared absorbing parts into an electric signal. Support wiring 11 contained within the inside of a support structure for supporting the infrared detecting pixel through a hollow structure 7 on a semiconductor substrate 6 is formed finely with a metal damascene 108 which is on the same layer as a gate of a metal damascene gate MOS transistor 120 used for its peripheral circuit, reducing a support structure cross section and its heat conductance.
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