发明名称 |
Power MOSFET having a trench gate electrode and method of making the same |
摘要 |
<p>The capacitance between the gate electrode film (11) and the drain layer (18) ofa trench gate power MOSFET is reduced while keeping the resistance low, with the breakdown voltage of the gate insulating film (27) also being maintained at a sufficient level. A trench (10) is formed with the bottom of the trench at a comparatively shallow position in an N-epitaxial layer (18). The thickness of a bottom surface part (16) of the gate electrode film (11) is formed so as to be thicker than other parts of the gate electrode film (11). Also, when a P type body layer (19) is formed, an interface between the P type body layer (19) and an N-epitaxial layer (18) is located at a deeper position than a bottom end of the gate electrode film (11). <IMAGE></p> |
申请公布号 |
EP1248300(A2) |
申请公布日期 |
2002.10.09 |
申请号 |
EP20020006955 |
申请日期 |
2002.03.26 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
TAKEMORI, TOSHIYUKI;ITOI, MASATO;WATANABE, YUJI |
分类号 |
H01L29/41;H01L21/336;H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L29/78;H01L21/331 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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