| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of easily forming a polycrystalline diamond thin film having a large grain size and high quality to a large area at a low cost and an apparatus for implementing this method. SOLUTION: This method comprises forming an amorphous or fine crystalline carbon thin film 100A by a catalyst CVD process, etc., on a substrate 1, bringing hydrogen or gas contg. hydrogen into contact with a heated catalyst body, acting the hydrogen-base active seed formed in such a manner to the carbon thin film 100A under the effect of an electric field below a glow discharge initiation voltage and/or magnetic field at need (biased or non-biased catalyst AHA treatment), removing the carbon of this amorphous component by etching, forming the carbon superfine particle layer 100B of a diamond structure and growing the polycrystalline diamond thin film using the layer as a seed by a biased or non-biased catalyst CVD process, etc., or the method of manufacturing the semiconductor device and the apparatus for implementing these.</p> |
