| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor device capable of increasing a manufacturing yield and reliability by preventing delaminations of a capacitance film. CONSTITUTION: The process comprises the steps of forming a stacked film 20 consisting of a tightly adhered film, barrier film and a tightly adhered film, forming a metal film 15 to be a lower electrode inside a wafer diameter direction on the stacked film, coating a resist 16 on the metal film 15, etching the stacked film 20 being exposed outside of the wafer direction from an circumference of the metal film 15 using metal film 15 as a mask, and forming the capacitor film 17 after removing the resist 16 on the metal film 15.
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