| 摘要 |
Diode lasers of the formula GaInP/InGaAs on GaAs substrates with GaAlAs/GaAs waveguides which operate at powers higher than 5.3W with emitting apertures of 100 microns are disclosed. By varying compositions of the active layer and by employing strained layer quantum wells, diode lasers are fabricated over the wavelength range of 700 to 1100 nm.
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