Off-diameter method for preparing semiconductor wafers

摘要

Methods for preparing semiconductor wafers are disclosed. A method includes rotating a semiconductor wafer in a vertical orientation, and the wafer having first and second opposing surfaces. The method further includes contacting each of the first and second opposing surfaces of the wafer with a cylindrical wafer preparation member so as to define a substantially linear contact area. The cylindrical wafer preparation members are disposed in an opposing relationship such that the contact areas are defined at corresponding locations on the first and second opposing surfaces. Then, the method includes controlling at least one wafer preparation parameter to obtain a variable wafer material removal rate as the contact areas defined on the first and second opposing surfaces are moved from a first position to a second position. The variable wafer material removal rate being formulated to provide the wafer with a substantially uniform thickness.