Method for forming high quality multiple thickness oxide layers by reducing descum induced defects

摘要

A method for forming high quality oxide layers having different thicknesses by eliminating descum induced defects is disclosed. A semiconductor substrate is subjected to reactive ion etching. The semiconductor substrate includes a wafer, an oxide layer on the wafer, a developed photoresist mask on the oxide layer. The oxide layer is then etched, and the remaining photoresist is stripped before another layer of oxide is grown on the substrate.