发明名称 |
Induction plasma processing chamber |
摘要 |
A method and an apparatus of plasma treating a wafer with low capacitive coupling, high induction power density and high uniformity of reactive species were disclosed in this invention. A first embodiment manages a multiturn helical coil to match with an impedance at an RF drive frequency for reducing capacitive coupling. A second embodiment uses a can-like dielectric to prompt plasma species approaching the wafer surface at a low pressure, thus providing higher plasma density and higher etch rate. A third embodiment uses a cap-like dielectric to raise the ceiling above the wafer for improving the plasma generation uniformity in the chamber.
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申请公布号 |
US6462483(B1) |
申请公布日期 |
2002.10.08 |
申请号 |
US19990442765 |
申请日期 |
1999.11.18 |
申请人 |
NANO-ARCHITECT RESEARCH CORPORATION |
发明人 |
JENG DAVID GUANG-KAI;CHEN FRED YINGYI;KUO TSUNG-NANE;LEE HONG-JI |
分类号 |
H01J37/32;(IPC1-7):H01J7/24 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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