发明名称 |
Integrated memory having memory cells with magnetoresistive storage effect |
摘要 |
The integrated memory has memory cells with a magnetoresistive storage effect in a memory cell array in the form of a matrix. The memory cells are each connected between one of the column lines and one of the row lines. The column lines are each connected to a read amplifier for reading a data signal from a memory cell. The read amplifier has an operational amplifier with feedback, and a first control input connected to one of the column lines. A capacitor is connected between a second control input of the operational amplifier and a terminal for a supply potential and is used to compensate for any offset voltage at the control inputs of the operational amplifier. This allows a data signal which is to be read from one of the memory cells to be detected comparatively reliably.
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申请公布号 |
US6462979(B2) |
申请公布日期 |
2002.10.08 |
申请号 |
US20010799626 |
申请日期 |
2001.03.05 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHLOESSER TILL;THEWES ROLAND |
分类号 |
G11C11/14;G11C11/15;G11C11/16;H03F1/00;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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