发明名称 |
Method of forming capacitor on cell region including forming dummy pattern around alignment key |
摘要 |
A method for the fabrication of a semiconductor device which prevents the occurrence of a defective die and an erroneous alignment otherwise invoked by a difference in polishing level between an edge and a central portion of a wafer. The method comprises steps of forming a group of dummy patterns around an alignment key of edges of a wafer, wherein the wafer is obtained by forming the capacitor on the cell region, and the dummy pattern has the same elevation as the capacitor formed on the cell region; disposing an interlayer insulating film on a resulting structure obtained after the forming process; and performing a chemical-mechanical polishing on the interlayer insulating film. Further, the process of forming the group of dummy patterns may be performed while forming the capacitor on the cell region.
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申请公布号 |
US6461941(B2) |
申请公布日期 |
2002.10.08 |
申请号 |
US20010867861 |
申请日期 |
2001.05.31 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM YOUNG-KI |
分类号 |
H01L21/301;H01L21/3105;H01L23/544;(IPC1-7):H01L21/301;H01L21/46;H01L21/78 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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