LPCVD furnace uniformity improvement by temperature ramp down deposition system

摘要

A new method is provided for the application of Chemical Vapor Deposition (CVD) processes. Where conventional CVD processes are performed while maintaining one, constant temperature during the CVD process, from the start of the CVD process up to the point where the CVD process is completed, the invention provides for first raising the temperature to a processing temperature and then gradually reducing the applied temperature within the cycle time that is required for the completion of the CVD process.