发明名称 |
Methods for growth of relatively large step-free SiC crystal surfaces |
摘要 |
A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.
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申请公布号 |
US6461944(B2) |
申请公布日期 |
2002.10.08 |
申请号 |
US20010776998 |
申请日期 |
2001.02.07 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
NEUDECK PHILIP G.;POWELL J. ANTHONY |
分类号 |
C30B25/02;C30B25/18;H01L21/20;(IPC1-7):H01L21/20;H01L21/36;H01L21/44;H01L21/31 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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