| 摘要 |
A magnetoresistive sensor according to the present invention has a spin-valve film structure which includes an underfilm, a first ferromagnetic film, a conductive film, a second ferromagnetic film, an antiferromagnetic film and a protective film. One surface of the first ferromagnetic film is adjacent to the one surface of the underfilm, and the one surface of the conductive film is adjacent to the other surface of the first ferromagnetic film. One surface of the second ferromagnetic film is adjacent to the other surface of the conductive film. One surface of the antiferromagnetic film adjacent to the other surface of the second ferromagnetic film, and thus, the antiferromagnetic film is bonded to the second ferromagnetic film with exchange interaction. One surface of the protective film is adjacent to the other surface of the antiferromagnetic film. The underfilm has a face centered cubic crystal structure, and is oriented in the (111) plane direction. Then, the distance between the adjacent (111) planes of the spin-valve film structure except the antiferromagnetic film is within 0.2050-0.2064 nm.
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