发明名称 Capacitor structure and fabrication process
摘要 The invention relates to a capacitor structure with two substrates (1) each having a capacitor electrode (3) deposited on its surface, the substrates (1) being joined together by bump structures located on both sides of the capacitor electrodes (3) such that the capacitor electrodes (3) lie opposite each other and form a capacitor, the distance d between the capacitor electrodes (3) being defined by the height of the bump structures, and measuring connections (5) being provided on one of the substrates (1) for making capacitance measurements.
申请公布号 US6460416(B1) 申请公布日期 2002.10.08
申请号 US19980112849 申请日期 1998.07.10
申请人 MICRONAS INTERMETALL GMBH 发明人 IGEL GUNTER
分类号 G01L9/12;G01L9/00;H01G5/16;H01G13/00;(IPC1-7):G01L9/12 主分类号 G01L9/12
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