发明名称 |
High-dielectric constant capacitor and memory |
摘要 |
A capacitor (100) with a high dielectric constant oxide dielectric (102) plus Ir- or Ir and Rh bond over the oxygen site in Barium strontium titanate (BST) dielectric to achieve the high Schottky barrier, and very thin layers of Ir or Rh with conductive oxide backing layers (106, 116) provide oxygen depletion deterrence. Rh-containing capacitor plates (104, 114) yielding high Schottky barrier interfaces.
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申请公布号 |
US6462931(B1) |
申请公布日期 |
2002.10.08 |
申请号 |
US19970956407 |
申请日期 |
1997.10.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TANG SHAOPING;ANTHONY JOHN MARK;SUMMERFELT SCOTT |
分类号 |
H01L21/02;H01L21/8246;H01L27/108;H01L27/115;(IPC1-7):H01G4/008;H01G4/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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