| 摘要 |
A diffusion preventive layer extending between the bottom surface of a lower electrode and an interconnection connecting the lower electrode to one of the diffusion layer of a switching transistor is self-aligned. As a result, side trench is produced since a hole pattern is formed by using a dummy film, and even if a contact plug of a memory section is misaligned with the diffusion preventive layer, the contact plug is out of direct contact with a dielectric film having a high permittivity. Hence, a highly reliable device can be obtained.
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