Method of forming a capacitor in a semiconductor device

摘要

The present invention relates to a method of manufacturing a capacitor in a semiconductor device capable of improving the leak current characteristic while preventing degradation of a dielectric characteristic of a Ta2O5 capacitor. The present invention includes forming a Ta2O5 dielectric film on a lower electrode and then forming a TaN upper electrode on the Ta2O5 dielectric film using a H2TaF7 reactive source gas or a NH3 gas. Thus, the present invention can improve the leak current characteristic since the TaN thin film has a large work function than the TiN thin film used as the conventional upper electrode. Also, as the H2TaF7 gas used in the present invention can be used as the source gas for depositing the Ta2O3 dielectric film, the Ta2O5 dielectric film and the TaN upper electrode can be simultaneously formed in in-situ at the same chamber.