| 摘要 |
A memory device is disclosed. The memory device includes, in some embodiments, a plurality of virtual columns that may be addressed by applying an address to a plurality of address layers of the memory device. The virtual columns include addressable elements coupled to the address layers. The addressable elements allow for a data storage element associated with the virtual columns to be accessed for read/write operations when each addressable element receives a particular signal as an input from the address layer to which it is coupled.
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