SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce a contact resistance and a leakage current and to prevent an etch of a contact plug due to misalignment by using double contact plugs. CONSTITUTION: An interlayer dielectric(101) is formed on a semiconductor substrate(100). A contact hole is formed by selectively etching the interlayer dielectric(101). A contact plug(205) stacked sequentially a lower plug(103) and an upper plug(104) is formed in the contact hole. After forming an upper conductive layer on the resultant structure, a metal interconnection(107) is formed by selectively etching the upper conductive layer.