| 摘要 |
PURPOSE: A repair circuit of a semiconductor memory device is provided to output stably a repair signal regardless of noise by adding a precharge stabilization portion to the repair circuit. CONSTITUTION: A precharge signal input portion(10) is used for precharging supply voltage in response to a precharge signal. A fuse portion(20) is connected with an output terminal of the precharge signal input portion(10) in order to protect circuits from over-current. An address signal input portion(30) is connected between the fuse portion(20) and a ground terminal and is turned according to an input state of defected address in order to support a programming operation of the fuse portion(20) or confirm a state of programming. An output portion(40) outputs the programming state of the fuse portion(20) according to a signal of the address signal input portion(30). A latch portion(50) is used for stabilizing an output value of the output portion(40). A precharge stabilization portion(60) is connected with the fuse portion(20) in order to precharge the fuse portion(20) when the precharge signal and the address signal are not in active states.
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