发明名称 |
SEMICONDUCTOR ELECTRON EMITTER |
摘要 |
An electron emitter comprising a body of a semiconductor material which is adapted to generate light therein when properly biased but which is a poor absorber of the generated light. On a surface of the body is a thin region of a semiconductor material which is a good absorber of the generated light and which has an index of refraction which substantially matches the index of refraction of the material of the body. The thin semiconductor material region is adapted to absorb the light from the body and convert the light into free electrons. On the surface of the semiconductor material layer is a thin film of an electropositive work function reducing material which is adapted to emit the electrons formed in the semiconductor material layer.
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申请公布号 |
US3667007(A) |
申请公布日期 |
1972.05.30 |
申请号 |
USD3667007 |
申请日期 |
1970.02.25 |
申请人 |
RCA CORP. |
发明人 |
HENRY KRESSEL;JACQUES ISAAC PANKOVE |
分类号 |
H01J1/30;H01J1/308;(IPC1-7):H01L15/00 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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