| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems of the conventional semiconductor light-emitting elements of the wavelength of emitted light changing by ambient temperature, etc., even though each kind of optical element have been developed heretofore for use in optical communication, and to remove the limit of the conventional cases of erbium and nitrogen not being able to be doped in large quantity to a compound semiconductor, even though realization of a light-emitting element small in the change of wavelength of emitted light, due to the temperature making use of the light emission between the inner shell 4f levels of erbium has been requested from the circumstances stated. SOLUTION: A semiconductor light-emitting element, where erbium and nitrogen are doped at the same time, to the compound semiconductor, and compound semiconductors are stacked from above and below it, is provided to solve the problems. A compound semiconductor layer 2, containing erbium and nitrogen is stacked, being sandwiched by compound semiconductors 3 and 4 with energy gaps than this larger on a semiconductor substrate 1. In an embodiment, the upper and lower compound semiconductor layers sandwiching the compound semiconductor layer where the above erbium and nitrogen are added at the same time to form a p-n junction. |
