METHOD FOR EPITAXIALLY GROWING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To enhance the crystallinity of a gallium nitride based compound semiconductor for use in an electronic device while improving planality of the surface. SOLUTION: In the method for growing a gallium nitride based compound semiconductor layer epitaxially on a sapphire substrate, the epitaxial growth face of the substrate is a face set at an off angle of 5 deg. with respect to face A. The off angle is preferably set in the range of 0.25-0.75 deg. and the epitaxial growth face is set off in the direction of M-axis.