| 摘要 |
PROBLEM TO BE SOLVED: To arrange a light emitting element of a rectangular parallelepiped having a side face perpendicular to the surface of the element to become an optical resonance surface by utilizing a cleaved surface of a crystal while suppressing the invasion of atoms for constituting a buffer layer into a silicon substrate. SOLUTION: The III nitride semiconductor light emitting element comprise a laminated structure formed in a profile of a rectangular parallelepiped having at least a silicon single crystal substrate having an azimuth of the surface set to [111], a buffer layer laminated on the surface of the substrate, a pn junction light emitting unit constituted of a lower clad layer, a light emitting layer and an upper clad layer made of a III nitride semiconductor formed on the buffer layer, and a current narrowing layer. In this element, the side face of the laminated structure of the longitudinal direction formed in the profile of the rectangular parallelepiped is formed as a crystal plane [110] parallel to the direction [211] of the narrowing layer.
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