| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of steps, and to improve hot carrier resistance of a MOS transistor and performance such as the current gain or cut-off fre quency of a PNP transistor in a method for manufacturing a BiMOS semiconduc tor device where at least an N type MOS transistor and the PNP transistor are formed in the same semiconductor substrate. SOLUTION: The N type impurity for forming a lightly doped source region and drain region 22 of an N type MOS transistor and the N type impurity for forming a base region 26 of a vertical PNP transistor are doped by the same step. Further, the ion species of N type impurity is arsenic As.
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