| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to simplify manufacturing processes and to improve processing margin by improving topology between a gate and an active region. CONSTITUTION: An active region is defined by forming a field oxide layer(22) on a substrate(21). A gate(23) is formed on the active region and an insulating spacer(26) is formed at both sidewalls of the gate. A polysilicon spacer(27a) is formed at sidewalls of the field oxide layer(22) and the insulating spacer(26). An HSG(Hemi Spherical Grain) polysilicon layer(28) is selectively formed at sidewalls of polysilicon spacer and on the active region. After forming an interlayer dielectric(29) on the resultant structure, a contact hole is formed to expose the gate and the HSG polysilicon layer. A contact(30) is formed by filling a conductive layer into the contact hole.
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