METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a thin film transistor is provided to be capable of easily isolating between transistors and preventing punch-through. CONSTITUTION: A substrate(10) is prepared. An insulating layer(11) is formed on the entire surface of the substrate(10). An active region(13) is formed in a desired portion of the insulating layer. A gate insulating layer(15a) and a gate electrode(16a) are sequentially formed on the active region. Then, a source/drain region(17) is formed in the active region of both sides of the gate electrode. An insulating spacer(18) is formed at both sidewalls of the gate electrode.