| 摘要 |
PROBLEM TO BE SOLVED: To enable equal etching in a plasma etching device. SOLUTION: This etching device has a processing means which processes a semiconductor wafer by ionizing reactive gas generating plasma, a stage 2 on which to install the wafer, a magnet 11 which is installed under the wafer 3, and a magnet 12 which is installed above the wafer 3. For the magnets 11 and 12, the power of the magnetic fields in the vicinity of the periphery of the wafer 3 and in the upper space is strengthened more than the power of the magnetic field in the wafer 3 and its upper space. |
