INTEGRATED CIRCUIT STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit structure that can provide low relative permittivity. SOLUTION: The low relative permittivity can be achieved by forming an interlayer insulating multilayer by providing boron nitride films as protective films 34 between interlayer insulating films 33 each having low relative permittivity, being made of an organic coating film or a porous film, and by combining the interlayer insulating films 34 having low relative permittivity and the boron nitride films having excellent properties such as superior resistance to mechanical and chemical impacts, high thermal conductivity and low relative permittivity in a state in which firm adhesion and low hygroscopicity are maintained.