| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To enhance the characteristics of a bipolar transistor. SOLUTION: An insulation film 17 comprising a silicon oxide film is formed on the side face of an emitter opening 14 through oxidation, and then a silicon nitride film 11 is removed, so that the film is undercut to form an opening; and in this opening, an epitaxial layer 19 composed of SiGe is selectively grown.
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| 申请公布号 |
JP2002289834(A) |
申请公布日期 |
2002.10.04 |
| 申请号 |
JP20010092551 |
申请日期 |
2001.03.28 |
| 申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
HASHIMOTO TAKASHI;MIKAMI KOJI;UDO TSUTOMU;KONDO MASAO;OUE EIJI |
| 分类号 |
H01L21/28;H01L21/331;H01L21/337;H01L21/768;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/732;H01L29/737;H01L29/80;(IPC1-7):H01L29/732;H01L21/822;H01L21/824 |
主分类号 |
H01L21/28 |
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