发明名称 METHOD FOR FORMING INSULATING OXIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an insulating oxide film with superior electric characteristics, wherein oxidation is prevented from advancing into a substrate during the period of deposition of the oxide film. SOLUTION: The insulating oxide film with superior electric characteristics can be formed by switching oxidizing gases to be supplied or separating gas components under control to prevent oxidation from advancing into a substrate.
申请公布号 JP2002289613(A) 申请公布日期 2002.10.04
申请号 JP20010088397 申请日期 2001.03.26
申请人 TELECOMMUNICATION ADVANCEMENT ORGANIZATION OF JAPAN;MITSUBISHI ELECTRIC CORP;SEMICONDUCTOR RES FOUND 发明人 KANEMOTO KYOZO;YOSHIDA TAKASHI;KURABAYASHI TORU;NISHIZAWA JUNICHI
分类号 H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/316
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