发明名称 |
METHOD FOR FORMING INSULATING OXIDE FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an insulating oxide film with superior electric characteristics, wherein oxidation is prevented from advancing into a substrate during the period of deposition of the oxide film. SOLUTION: The insulating oxide film with superior electric characteristics can be formed by switching oxidizing gases to be supplied or separating gas components under control to prevent oxidation from advancing into a substrate.
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申请公布号 |
JP2002289613(A) |
申请公布日期 |
2002.10.04 |
申请号 |
JP20010088397 |
申请日期 |
2001.03.26 |
申请人 |
TELECOMMUNICATION ADVANCEMENT ORGANIZATION OF JAPAN;MITSUBISHI ELECTRIC CORP;SEMICONDUCTOR RES FOUND |
发明人 |
KANEMOTO KYOZO;YOSHIDA TAKASHI;KURABAYASHI TORU;NISHIZAWA JUNICHI |
分类号 |
H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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