| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a protective film of a desired thickness can be left on a tungsten film. SOLUTION: A TiN film 4, a W film 3, and a SiN film 2, which has different etching characteristic from that of an interlayer insulating film 9 covering the W film 3 to which patterning has been performed, are sequentially deposited on a semiconductor wafer. Next, an upper layer TiN film 6, which has different etching characteristic from that of the SiN film 2, is deposited on the SiN film 2. Next, a resist is applied on the upper layer TiN film 6 and patterning is performed to form a resist film 1. Next, the upper layer TiN film 6 and the SiN film 2 are etched to perform patterning by using the resist film 1 as a mask. Then, the W film 3 is etched to perform patterning by using the upper layer TiN film 6 and the SiN film 2 as a mask.
|
