| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate processing apparatus that can shorten a temperature rising/falling time, increase wafer processing throughput per unit hour, and offer a high quality wafer. SOLUTION: Pipelines 13 and 14 are formed separately so that either first gas (N2 gas) or second gas (He gas) having larger thermal conductivity than the first gas can be introduced into a process chamber selectively. Valve means (a first open/shut valve 16, a second open/shut valve 18) are formed in the pipelines 13, 14 to switch the first gas and the second gas and introduce the switched gas into the process chamber, and those valve means are controlled by a gas switching controller 22 so that the second gas (He gas) flows into the process chamber at least during the temperature rising/falling period.
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