| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulation film material having high thermal stability and low dielectric constant for a semiconductor memory. SOLUTION: A semiconductor device is characterized by comprising a silica frame wherein fluorine atoms or fluorine containing groups are fixed by covalent bonding, and by being arranged as an insulation film between wirings or interlayers of the wirings of the semiconductor memory provided with a capacity unit, or at a protective unit of the memory. |
