| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the occurrence of voids in the bottom section of a contact, as much as possible. SOLUTION: A thin film transistor is provided with a semiconductor layer 5, in which a source region 7 and a drain region 8 are formed, insulating films 10 and 14 formed on the semiconductor layer 5, and a contact hole made to the source and drain regions 7 and 8 through the insulation films 10 and 14. The contact hole has a cross-sectional shape that becomes narrower in width, as going toward the source or drain region 7 or 8. The source and drain regions 7 and 8 on the bottom of the contact hole are partially shaved. Inclined anglesθ1 of the cross sections of the partially shaved portions of the source and drain regions 7 and 8 on the bottom of the contact hole, and inclined angleθ2 of the insulating film 10 and 14 immediately above the regions 7 and 8 are adjusted to satisfy the relation 90 deg.>θ2 >θ1 .</p> |
