| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high output semiconductor laser element, capable of oscillating in a single lateral mode of a 400 nm band. SOLUTION: The semiconductor laser element comprises a current blocking layer 15 having a stripe-like current injection opening 30 of a width dc on an active layer 12, a high refractive index layer 16 made of a Ga1-x2 Alx2 N formed at an element end side via an interval of a width dc/2 at both sides at a region of the width db1 of both sides of the opening 30 on the layer 15, and an upper clad layer 17 made of a Ga1-x1 Alx1 N (x2-x1>;0.8) so as to cover the layer 16 and the openings. The element further comprises an ARROW structure having a high refractive index region having a higher equivalent refractive index than that of a core region at both sides at the core region specified by the opening 30 as a center in a horizontal direction of the active layer by the layer 17 and the layer 16, a low refractive index region having an equivalent refractive index equivalent to that of the core region at its outside, and further a high refractive index region at its outside.
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