| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-receiving element which is suitable for high-speed response by thinning the thickness of a light-absorbing layer thereby shortening the traveling distance of carriers excited by light. SOLUTION: A buffer layer 11 exhibiting one conductivity-type, a one conductivity-type semiconductor layer 12, a light-absorbing layer 13, and an opposite conductivity type semiconductor layer 14 being a window layer are stacked in the order, on a substrate 10 consisting of Si, so as to constituted a GaAs semiconductor light-receiving layer, and an ohmic contact layer 15 and a p-side electrode 17a are stacked in the order, on the opposite conductivity type semiconductor layer 14, and an n-side electrode 17b is formed at the rear of the substrate 10.
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