| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method for suppressing the diffusion to a semiconductor substrate of nitrogen for suppressing the punch-through of conductive impurities introduced into a gate electrode, while suppressing the punch-through to the semiconductor substrate of the conducive impurities and suppressing the deterioration of transistor characteristics. SOLUTION: The semiconductor device having the gate electrodes 10a and 10b, containing the conductive impurities, is provided with a gate insulation film 6 formed on the semiconductor substrate 2, a diffusion suppression film 7 formed on the gate insulation film 6, containing nitrogen for suppressing the diffusion of the conductive impurities to the gate insulation film 6 and the semiconductor substrate 2, the gate electrodes 10a and 10b formed on the diffusion suppression film 7, containing the conductive impurities and a source region and a drain region 13 and 14 formed on the semiconductor substrate 2.
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