发明名称 ELECTRON RAY SOURCE, ELECTRON RAY EXPOSURE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electron ray source which enables to realize exposure transcribing with little indistinctness. SOLUTION: The electron ray source 1 comprises, a transparent substrate 2, a photoelectriccathode film 3 which is formed on the transparent substrate 2, an insulator mask film 4 which is formed no the photoelectriccathode film 3 and has a negative pattern of a transcribing pattern, and a focusing electrode mesh 3a which is formed on the mask film 4. The photoelectriccathode film 3 is made from, for example, gold, platinum, low work function materials, or semiconductor having small or negative electron affinity. The mask film 4 is made from, for example, amorphous insulator such as SiO2 , which has a short electron mean free path. The mask film 4 is provided with the focusing electrode mesh 3a which surrounds a sub field that is a region which is exposed together with electron rays. Paths of electrons which are emitted from the photoelectriccathode film 3 at wide angles are curved by a negative voltage which is applied to the focusing electrode mesh 3a, resulting in limiting of electron emitting angles.
申请公布号 JP2002289126(A) 申请公布日期 2002.10.04
申请号 JP20010087776 申请日期 2001.03.26
申请人 NIKON CORP 发明人 IKEDA JUNJI
分类号 G03F7/20;H01J37/073;H01J37/305;H01L21/027;(IPC1-7):H01J37/073 主分类号 G03F7/20
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