发明名称 SUBSTRATE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To perform continuous treatment in a substrate treating apparatus normally by preventing inflow of residual gases in a treatment chamber into the other chambers. SOLUTION: In this substrate treating apparatus, at least two treatment chambers 4, 5 are connected to a common conveying chamber 3. Gate valves 9, 10 are arranged between the treatment chambers 4, 5 and the conveying chamber 3. When the substrate 20 is conveyed between the treatment chambers 4, 5 and the conveying chamber 3 by opening and closing the gate valves 9, 10, air pressure in each chamber 3 to 5 is set as follows. PAn >PB1 PB2 >PAm Where, PAn , PAm is the pressure in treatment chambers (n, m>=1, n≠m). PB1 , PB2 is the pressure in the conveying chamber.
申请公布号 JP2002289668(A) 申请公布日期 2002.10.04
申请号 JP20010091069 申请日期 2001.03.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHINOZAKI KENJI;TAKAHASHI SATORU
分类号 C23C14/56;C23C16/44;H01L21/205;H01L21/677;H01L21/68;(IPC1-7):H01L21/68 主分类号 C23C14/56
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