NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of minimizing a size of a cell and capable of the low power consumption in program operation, and to provide its manufacturing method. SOLUTION: A charge save area, a control gate and a select gate are formed on a substrate. The control gate 512' has a spacer shape, and the spacer 528 on a source side is located on the side wall of the charge save area and the control gate 512'. Further, a LDD spacer 540 is formed on the side wall of the select gate 506, and a drain diffusion region has a LDD structure with a HALO region 536. These regions are formed by repeatedly performing self- alignment.