HETEROJUNCTION FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide the heterojunction field effect transistor of superior noise characteristics and high gate breakdown strength. SOLUTION: The heterojunction field effect transistor is provided with a channel layer composed of GaInP lattice-matching with GaAs, for which the potential energy of a conduction band is lower than the buffer layer, a Schottky layer for which the potential energy of the conduction band is higher than the channel layer, a gate electrode, a drain electrode and a source electrode through the buffer layer on a GaAs semiconductor substrate. The Schottky layer is formed of either GaInP or (AlGa)0.5 In0.5 P.