发明名称 METHOD FOR JOINING SEMICONDUCTOR ELEMENT AND JOINING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a joining method and a joining apparatus which can fix a heating device on a holder of a semiconductor element side and can join the semiconductor element whose cost is low and has high reliability. SOLUTION: The joining method, which joins an extruded metal electrode 4 formed on a semiconductor element 3 to an electrode 2 of a substrate 1, is composed of a process for abutting the heated extruded electrode 4 against the electrode 2 of the heated substrate and a process for applying a ultrasonic vibration 7A to the substrate in the abutting state.
申请公布号 JP2002289644(A) 申请公布日期 2002.10.04
申请号 JP20010083963 申请日期 2001.03.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAMAGUCHI TSUNEO;ISHIZAKI MITSUNORI
分类号 H01L21/60;H01L21/607;(IPC1-7):H01L21/60 主分类号 H01L21/60
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