发明名称 |
METHOD FOR JOINING SEMICONDUCTOR ELEMENT AND JOINING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a joining method and a joining apparatus which can fix a heating device on a holder of a semiconductor element side and can join the semiconductor element whose cost is low and has high reliability. SOLUTION: The joining method, which joins an extruded metal electrode 4 formed on a semiconductor element 3 to an electrode 2 of a substrate 1, is composed of a process for abutting the heated extruded electrode 4 against the electrode 2 of the heated substrate and a process for applying a ultrasonic vibration 7A to the substrate in the abutting state.
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申请公布号 |
JP2002289644(A) |
申请公布日期 |
2002.10.04 |
申请号 |
JP20010083963 |
申请日期 |
2001.03.23 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
HAMAGUCHI TSUNEO;ISHIZAKI MITSUNORI |
分类号 |
H01L21/60;H01L21/607;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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