METHOD AND APPARATUS FOR FORMING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a thin film, thereby the uniformity of the thickness of a thin film on the surface of a silicon wafer can be improved and a fine silicon nitride thin film of high quality can be obtained in the formation of the silicon nitride thin film onto the surface of the silicon wafer using a LP-CVD(Low Pressure-Chemical Vapor Deposition) method. SOLUTION: In the formation of the silicon nitride thin film onto the surface of the silicon wafer by the supply of a material gas to the surface of the silicon wafer heated in a reduced pressure atmosphere and by thermal decomposition, a hydrogen gas is added to a processing gas for forming the silicon nitride thin film.